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FCP7N60/FCPF7N60/FCPF7N60YDTU
SuperFET
FCP7N60/FCPF7N60/FCPF7N60YDTU
Features
* 650V @TJ = 150C * Typ. Rds(on)=0.53 * Ultra low gate charge (typ. Qg=25nC) * Low effective output capacitance (typ. Coss.eff=60pF) * 100% avalanche tested
June 2008
TM
Description
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
G GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCP7N60
600 7 4.4 21
FCPF7N60
7* 4.4* 21* 30 230 7 8.3 4.5
Unit
V A A A V mJ A mJ V/ns
83 0.67 -55 to +150 300
31 0.25
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCP7N60
1.5 62.5
FCPF7N60
4.0 62.5
Unit
C/W C/W
(c)2008 Fairchild Semiconductor Corporation
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FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
Package Marking and Ordering Information
Device Marking
FCP7N60 FCPF7N60 FCPF7N60
FCP7N60/FCPF7N60/FCPF7N60YDTU
Device
FCP7N60 FCPF7N60 FCPF7N60YDTU
Package
TO-220 TO-220F TO-220F (Forming)
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 7A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 3.5A VDS = 40V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0MHz
Min
600 -------3.0 ----------(Note 4)
Typ
-650 0.6 700 -----0.53 6 710 380 34 22 60 35 55 75 32 23 4.2 11.5
Max Units
----1 10 100 -100 5.0 0.6 -920 500 -29 -80 120 160 75 30 5.5 -V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 7A RG = 25
Switching Characteristics
-----
VDS = 480V, ID = 7A VGS = 10V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7A VGS = 0V, IS = 7A dIF/dt =100A/s --------360 4.5 7 21 1.4 --A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
ID, Drain Current [A]
10
1
ID , Drain Current [A]
10
1
150
10
0
10
0
25 -55
Note 1. VDS = 40V 2. 250 s Pulse Test
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
10
10
-1
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [ ], Drain-Source On-Resistance
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10
Note : TJ = 25
IDR , Reverse Drain Current [A]
10
1
VGS = 10V
10
0
VGS = 20V
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
10
VDS = 250V VDS = 400V
Capacitance [pF]
2000
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
8
6
1000
Ciss Crss
4
2
Note : ID = 7A
0 -1 10
10
0
10
1
0
VDS, Drain-Source Voltage [V]
0
5
10
15
20
25
QG, Total Gate Charge [nC]
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
1.0
Notes : 1. VGS = 10 V 2. ID = 3.5 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FCP7N60
10
2
Figure 9-2. Maximum Safe Operating Area for FCPF7N60
10
2
Operation in This Area is Limited by R DS(on)
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms 10 ms DC
ID, Drain Current [A]
10
1
100 us
10
1
100 us 1 ms 10 ms 100 ms DC
Notes :
10
0
10
0
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
10.0
7.5
ID, Drain Current [A]
5.0
2.5
0.0 25
50
75
100
125
150
TC, Case Temperature []
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP7N60
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z JC = 1 .5 /W M a x . (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t)
Z JC Thermal Response (t),
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
0 1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
D = 0 .5
Z JC Thermal Response (t),
10
0
0 .2 0 .1 0 .0 5
N o te s : 1 . Z JC 4 .0 /W M a x. (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z JC (t)
10
-1
0 .0 2 0 .0 1
PDM
s in g le p u ls e
10
-2
t1
t2
0 1
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Gate Charge Test Circuit & Waveform
5K 0 1V 2 20F 0n 30F 0n
Sm Tp a e ye a DT sU VS D
VS G 1V 0 Qs g Q g
VS G
Qd g
DT U
3A m
Ca e h rg
Resistive Switching Test Circuit & Waveforms
V D S R G V G S
R L V D D
V D S
9 0 %
1 0 V
D U T
V G S
1 0 %
t( n d) o
t r tn o
t( f) df o tf o f
t f
Unclamped Inductive Switching Test Circuit & Waveforms
L V D S ID R G 1V 0
tp
BDS V S 1 E = -- LA2 ---------I S ---------A S -2 BDS-V V S D D BDS VS IS A V D D I () Dt V D D
tp
DT U
V () Dt S Te i m
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT V
+
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I
SD
(DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions (Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
9
15.87 0.20
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FCP7N60/FCPF7N60/FCPF7N60YDTU
Mechanical Dimensions (Continued)
TO-220F (Y Forming)
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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FCP7N60/FCPF7N60/FCPF7N60YDTU
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
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Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I14
11 FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
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